2G - 3G small area InGaAs PIN photodiode with 1100nm - 1650nm wavelength small area PIN manufacturer from China Wuhan Shengshi Optical Technology Co., Ltd

2G - 3G small area InGaAs PIN photodiode with 1100nm - 1650nm wavelength

Place of Origin:

Zhejiang, China (Mainland)


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Product Detail

Model No.: small area PIN

InGaAs PIN COMPONENT Features 1. High response,flat structure of InGaAs PIN detector<

InGaAs PIN COMPONENT

Features

1. High response,flat structure of InGaAs PIN detector
2. Low capacitance and low dark current
3. Operating wavelength of 1100~1650nm
4. Power detector

Description
the 1100nm-1650nm small area InGaAs photodiode adopts the InGaAs detector chip, featuring low power consumption, small dark current, high sensitivity, great linearity, compact design, and small volume. the equipment is most commonly applied to the CATV receiver, power detection equipment, and optical signal receiver of the analog system.

Applications

CATV Transmission
Other Analog or Digital Optical Transmission

Absolute Maximum Ratings

Parameter	Symbol	Ratings	Unit
Storage Temperature	Tstg	-40~+100
Operating Temperature	Top	-40~+85
Max Input Power	Pmax	+4	dBm
Operating Voltage	Vop	5	V
PD Reverse Voltage	VR(PD)	25	V
Soldering Temp	-	260
Soldering Time	-	10	S

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Wavelength Range	λ	1100	-	1650	nm	-
Power Range	P	-70	-	+4	dBm	V,=5V
Active Diameter	Ad		75		um	-
Dark Current	Id	-	0.2	0.5	nA	-
Responsivity	R	-	0.85	0.90	A/W	λ=1310 nm
Responsivity	R		0.90	0.95	A/W	λ=1550 nm
Frequency Bandwidth	Bw	1		2000	MHz
Frequency Response	Fr	-	±0.5	-	dB
Capacitance	Ct	-	0.65	0.75	Pf	-
Response Time	Tr	0.1	-		ns	-
Return loss	Rl			-45	dB
CSO	-	-	-70	-	dBc	45~860MHz
CTB	-	-	-80	-	dBc	45~860MHz