1650nm Pulsed Laser Diode With High Output Power More Than 30mw for ODTR 1650nm pulse laser manufacturer from China Wuhan Shengshi Optical Technology Co., Ltd

1650nm Pulsed Laser Diode With High Output Power More Than 30mw for ODTR

Place of Origin:

Zhejiang, China (Mainland)


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Product Detail

Model No.: 1650nm pulse laser

1650nm Pulse Laser For OTDR Features 1. High output power Pf =&nb

1650nm Pulse Laser For OTDR

Features

1. High output power Pf = 30 mW @ IFP = 400mA
2. Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%
3. Long wavelength λC = 1650 nm
4. Built-in monitor PD

Applications

OTDR System

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
Forward Voltage	VFP			3.0	V	IFP = 400 mA, PW = 10 μs, Duty = 1%
Threshold Current	Ith		20	35	mA
Optical Output Power From Fiber	Pf	30			mW	IFP =400 mA, PW = 10 μs, Duty = 1%
Center Wavelength	λC	1645	1650	1655	nm	IFP = 400 mA, PW = 10 μs, Duty = 1%
Spectral Width	σ			4	nm	RMS (−3 dB)
Rise Time	tr		0.5	2.0	ns	10-90%
Fall Time	tf		0.5	2.0	ns	90-10%
Monitor Current	Im	0.05		2	mA	VRM =5 V

Absolute Maximum Ratings

Parameter	Symbol	Min.	Typical	Max.	Unit
Pulsed Forward Current	IFP			700	mA
Reverse Voltage	VR			2	V
Reverse Voltage (monitor PD)	VRM			10	V
Reverse Current (monitor PD)	IFPM			2	mA
Operating Case Temperature	TC	0		60
Storage Temperature	Tstg	-40		85
Lead Soldering Temperature	Tsld			260(10s)
Relative Humidity (noncondensing)	RH			85	%

Pin Description:

Package Outline

Order information

PLD-F652-XAXP30

P	LD	-F	65	2	-X	A	X	X
Mode	Product Type	Chip	Wavelength	Bandwidth	Connector	Pin	Pigtail Length	Power Range
		F:FP	65:1650nm	2:2.5Gb/s	1:FC/APC 2:FC/PC 3:SC/APC 4:SC/PC 5:LC/PC 6:LC/APC	A:725	05:0.5m 10:1.0m	P30:>30mW